dualworkfunctionmetalgate

Inthispaperweproposeanewmetal-gateCMOStechnologythatusesacombinationoftwometalstoachievealowthresholdvoltageforbothn-andp-MOSFET's.,2007年12月24日—因為在dualmetal中，分別使用nMOS和pMOS兩種workfunction相異的metalgate材料來控制臨界電壓。「dualmetal」在高溫退火時，因為加熱而使metalgate ...,Thispresentsmanymaterialsandintegrationchallenges,oneofthemostdifficultbeingtherequirementfortwoelectrodemat...

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(PDF) Dual work function metal gate CMOS transistors by ...

In this paper we propose a new metal-gate CMOS technology that uses a combination of two metals to achieve a low threshold voltage for both n- and p-MOSFET's.

32奈米以下IC半導體性能提昇的重要推手

2007年12月24日 — 因為在dual metal中，分別使用nMOS和pMOS兩種work function相異的metal gate材料來控制臨界電壓。「dual metal」在高溫退火時，因為加熱而使metal gate ...

a dual

This presents many materials and integration challenges, one of the most difficult being the requirement for two electrode materials with the appropriate work ...

Dual Work Function CMOS Gate Technology Based on ...

由 I Polishchuk 著作 · 2001 · 被引用 6 次 — In this paper we propose a new metal-gate CMOS technology that uses a combination of two metals to achieve a low threshold voltage for both n- and ...

Dual work function metal gate CMOS technology using ...

由 I Polishchuk 著作 · 2001 · 被引用 203 次 — This new technology is demonstrated for the Ti–Ni metal combination that produces gate electrodes with 3.9 eV and 5.3 eV work functions for n-MOS and p-MOS ...

Transistors with Dual Work Function Metal Gates by Single ...

由 WP Maszara 著作 · 被引用 116 次 — Abstract. Metal gate electrodes with two different work functions, ~4.5 and ~4.9 eV for NMOS and PMOS, respectively, were.